CGH60030D-GP4

GaN FETs GaN HEMT Die DC-6.0GHz, 30 Watt

SKU: CGH60030D-GP4

Qty:

PRICE BREAKS - The more you buy, the more you save

Quantity

10+

Price

R 4,236.71

Free shipping

GaN FETs GaN HEMT Die DC-6.0GHz, 30 Watt

Products specifications

Id - Continuous Drain Current	3 A
Maximum Drain Gate Voltage	-
Gain	15 dB
Maximum Operating Temperature	-
Output Power	30 W
Technology	GaN
Transistor Polarity	N-Channel
Minimum Operating Temperature	-
Transistor Type	HEMT
Vgs - Gate-Source Breakdown Voltage	- 10 V to 2 V
Product Type	RF JFET Transistors
Packaging	Waffle
Pd - Power Dissipation	-
Vds - Drain-Source Breakdown Voltage	120 V

Your name *

Your email *

Enquiry *

Products specifications

Id - Continuous Drain Current	3 A
Maximum Drain Gate Voltage	-
Gain	15 dB
Maximum Operating Temperature	-
Output Power	30 W
Technology	GaN
Transistor Polarity	N-Channel
Minimum Operating Temperature	-
Transistor Type	HEMT
Vgs - Gate-Source Breakdown Voltage	- 10 V to 2 V
Product Type	RF JFET Transistors
Packaging	Waffle
Pd - Power Dissipation	-
Vds - Drain-Source Breakdown Voltage	120 V