CGHV14500F

GaN FETs GaN HEMT 1.2-1.4GHz, 500 Watt

SKU: CGHV14500F

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Quantity

10+

Price

R 25,599.96

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GaN FETs GaN HEMT 1.2-1.4GHz, 500 Watt

Products specifications

Maximum Operating Temperature	+ 130 C
Packaging	Tube
Minimum Operating Temperature	- 40 C
Gain	17.1 dB
Product Type	RF JFET Transistors
Transistor Polarity	N-Channel
Output Power	510 W
Maximum Drain Gate Voltage	-
Technology	GaN
Transistor Type	HEMT
Vds - Drain-Source Breakdown Voltage	150 V
Vgs - Gate-Source Breakdown Voltage	- 10 V to 2 V
Pd - Power Dissipation	-
Id - Continuous Drain Current	36 A
Mounting Style	Screw Mount

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Products specifications

Maximum Operating Temperature	+ 130 C
Packaging	Tube
Minimum Operating Temperature	- 40 C
Gain	17.1 dB
Product Type	RF JFET Transistors
Transistor Polarity	N-Channel
Output Power	510 W
Maximum Drain Gate Voltage	-
Technology	GaN
Transistor Type	HEMT
Vds - Drain-Source Breakdown Voltage	150 V
Vgs - Gate-Source Breakdown Voltage	- 10 V to 2 V
Pd - Power Dissipation	-
Id - Continuous Drain Current	36 A
Mounting Style	Screw Mount