CGHV59070F

GaN FETs GaN HEMT 4.4-5.9GHz, 70 Watt
Lead Time: 182 Days

SKU: CGHV59070F-AMP

Availability: 69 in stock

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GaN FETs GaN HEMT 4.4-5.9GHz, 70 Watt
Lead Time: 182 Days

Products specifications

Technology	GaN
Mounting Style	Screw Mount
Minimum Operating Temperature	- 40 C
Output Power	76 W
Transistor Polarity	N-Channel
Maximum Drain Gate Voltage	-
Maximum Operating Temperature	+ 150 C
Vds - Drain-Source Breakdown Voltage	150 V
Product Type	RF JFET Transistors
Packaging	Tray
Transistor Type	HEMT
Vgs - Gate-Source Breakdown Voltage	- 10 V, 2 V
Id - Continuous Drain Current	6.3 A
Gain	14 dB
Pd - Power Dissipation	-

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Products specifications

Technology	GaN
Mounting Style	Screw Mount
Minimum Operating Temperature	- 40 C
Output Power	76 W
Transistor Polarity	N-Channel
Maximum Drain Gate Voltage	-
Maximum Operating Temperature	+ 150 C
Vds - Drain-Source Breakdown Voltage	150 V
Product Type	RF JFET Transistors
Packaging	Tray
Transistor Type	HEMT
Vgs - Gate-Source Breakdown Voltage	- 10 V, 2 V
Id - Continuous Drain Current	6.3 A
Gain	14 dB
Pd - Power Dissipation	-