CGHV60040D

DIE, GaN HEMT, G50V3, 0.4um, 5.2mm, 40W,

SKU: CGHV60040D

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Quantity

50+

Price

R 4,154.98

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DIE, GaN HEMT, G50V3, 0.4um, 5.2mm, 40W,

Products specifications

Output Power	40 W
Product Type	RF JFET Transistors
Technology	GaN
Id - Continuous Drain Current	3.2 A
Transistor Polarity	N-Channel
Pd - Power Dissipation	-
Vds - Drain-Source Breakdown Voltage	50 V
Maximum Operating Temperature	-
Vgs - Gate-Source Breakdown Voltage	-
Packaging	Gel Pack
Maximum Drain Gate Voltage	-
Transistor Type	HEMT
Gain	18 dB
Minimum Operating Temperature	-

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Products specifications

Output Power	40 W
Product Type	RF JFET Transistors
Technology	GaN
Id - Continuous Drain Current	3.2 A
Transistor Polarity	N-Channel
Pd - Power Dissipation	-
Vds - Drain-Source Breakdown Voltage	50 V
Maximum Operating Temperature	-
Vgs - Gate-Source Breakdown Voltage	-
Packaging	Gel Pack
Maximum Drain Gate Voltage	-
Transistor Type	HEMT
Gain	18 dB
Minimum Operating Temperature	-