CGHV60170D

GaN FETs GaN HEMT Die DC-6.0GHz, 170 Watt

SKU: CGHV60170D-GP4

Qty:

PRICE BREAKS - The more you buy, the more you save

Quantity

10+

Price

R 9,294.26

Free shipping

GaN FETs GaN HEMT Die DC-6.0GHz, 170 Watt

Products specifications

Product Type	RF JFET Transistors
Transistor Type	HEMT
Transistor Polarity	N-Channel
Maximum Operating Temperature	-
Packaging	Gel Pack
Vgs - Gate-Source Breakdown Voltage	-
Output Power	170 W
Id - Continuous Drain Current	12.6 A
Technology	GaN
Vds - Drain-Source Breakdown Voltage	50 V
Maximum Drain Gate Voltage	-
Pd - Power Dissipation	-
Gain	18 dB
Minimum Operating Temperature	-

Your name *

Your email *

Enquiry *

Products specifications

Product Type	RF JFET Transistors
Transistor Type	HEMT
Transistor Polarity	N-Channel
Maximum Operating Temperature	-
Packaging	Gel Pack
Vgs - Gate-Source Breakdown Voltage	-
Output Power	170 W
Id - Continuous Drain Current	12.6 A
Technology	GaN
Vds - Drain-Source Breakdown Voltage	50 V
Maximum Drain Gate Voltage	-
Pd - Power Dissipation	-
Gain	18 dB
Minimum Operating Temperature	-