GaN FETs GaN HEMT 7.9-9.6GHz, 50 Watt
Products specifications
| Transistor Type | HEMT |
| Id - Continuous Drain Current | 6 A |
| Transistor Polarity | N-Channel |
| Product Type | RF JFET Transistors |
| Vgs - Gate-Source Breakdown Voltage | 3 V |
| Mounting Style | Screw Mount |
| Minimum Operating Temperature | - 40 C |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Output Power | 50 W |
| Packaging | Tray |
| Gain | 10 dB |
| Maximum Drain Gate Voltage | - |
| Technology | GaN |
| Pd - Power Dissipation | - |
| Maximum Operating Temperature | + 150 C |