PTAB182002FC-V1-R0

RF MOSFET Transistors RF LDMOS FET

SKU: PTAB182002FC-V1-R0

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Quantity

50+

Price

R 2,778.25

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RF MOSFET Transistors RF LDMOS FET

Products specifications

Gain	15.5 dB
Maximum Operating Temperature	+ 200 C
Technology	Si
Product Type	RF MOSFET Transistors
Rds On - Drain-Source Resistance	150 mOhms
Transistor Polarity	Dual N-Channel
Packaging	Reel
Vds - Drain-Source Breakdown Voltage	65 V
Output Power	190 W

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Products specifications

Gain	15.5 dB
Maximum Operating Temperature	+ 200 C
Technology	Si
Product Type	RF MOSFET Transistors
Rds On - Drain-Source Resistance	150 mOhms
Transistor Polarity	Dual N-Channel
Packaging	Reel
Vds - Drain-Source Breakdown Voltage	65 V
Output Power	190 W