PTFB090901FA-V2-R250

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RF MOSFET Transistors RF LDMOS FET

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RF MOSFET Transistors RF LDMOS FET

Products specifications

Vds - Drain-Source Breakdown Voltage	65 V
Output Power	90 W
Packaging	Reel
Technology	Si
Product Type	RF MOSFET Transistors
Rds On - Drain-Source Resistance	123 mOhms
Transistor Polarity	N-Channel
Gain	19.5 dB
Maximum Operating Temperature	+ 225 C

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Products specifications

Vds - Drain-Source Breakdown Voltage	65 V
Output Power	90 W
Packaging	Reel
Technology	Si
Product Type	RF MOSFET Transistors
Rds On - Drain-Source Resistance	123 mOhms
Transistor Polarity	N-Channel
Gain	19.5 dB
Maximum Operating Temperature	+ 225 C