PTFB091802FC-V1-R250

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RF MOSFET Transistors RF LDMOS FET

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RF MOSFET Transistors RF LDMOS FET

Products specifications

Gain	19.5 dB
Product Type	RF MOSFET Transistors
Technology	Si
Packaging	Reel
Transistor Polarity	Dual N-Channel
Vds - Drain-Source Breakdown Voltage	65 V
Rds On - Drain-Source Resistance	150 mOhms
Output Power	180 W
Maximum Operating Temperature	+ 225 C

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Products specifications

Gain	19.5 dB
Product Type	RF MOSFET Transistors
Technology	Si
Packaging	Reel
Transistor Polarity	Dual N-Channel
Vds - Drain-Source Breakdown Voltage	65 V
Rds On - Drain-Source Resistance	150 mOhms
Output Power	180 W
Maximum Operating Temperature	+ 225 C