PTFB092707FH-V1-R250

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RF MOSFET Transistors RF LDMOS FET

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RF MOSFET Transistors RF LDMOS FET

Products specifications

Product Type	RF MOSFET Transistors
Technology	Si
Maximum Operating Temperature	+ 225 C
Rds On - Drain-Source Resistance	50 mOhms
Transistor Polarity	N-Channel
Output Power	270 W
Packaging	Reel
Gain	19 dB
Vds - Drain-Source Breakdown Voltage	65 V

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Products specifications

Product Type	RF MOSFET Transistors
Technology	Si
Maximum Operating Temperature	+ 225 C
Rds On - Drain-Source Resistance	50 mOhms
Transistor Polarity	N-Channel
Output Power	270 W
Packaging	Reel
Gain	19 dB
Vds - Drain-Source Breakdown Voltage	65 V