PTFB182503FL-V2-R0

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RF MOSFET Transistors RF LDMOS FET

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RF MOSFET Transistors RF LDMOS FET

Products specifications

Vds - Drain-Source Breakdown Voltage	65 V
Packaging	Reel
Transistor Polarity	N-Channel
Product Type	RF MOSFET Transistors
Technology	Si
Gain	19 dB
Maximum Operating Temperature	+ 200 C
Output Power	240 W
Rds On - Drain-Source Resistance	30 mOhms

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Products specifications

Vds - Drain-Source Breakdown Voltage	65 V
Packaging	Reel
Transistor Polarity	N-Channel
Product Type	RF MOSFET Transistors
Technology	Si
Gain	19 dB
Maximum Operating Temperature	+ 200 C
Output Power	240 W
Rds On - Drain-Source Resistance	30 mOhms