RF MOSFET Transistors RF LDMOS FET
Products specifications
| Technology | Si |
| Gain | 21 dB |
| Output Power | 28 W |
| Product Type | RF MOSFET Transistors |
| Vds - Drain-Source Breakdown Voltage | 65 V |
| Packaging | Reel |
| Rds On - Drain-Source Resistance | 50 mOhms |
| Transistor Polarity | Dual N-Channel |
| Maximum Operating Temperature | + 225 C |