RF MOSFET Transistors Power Amplifier
Products specifications
| Output Power | 480 W |
| Vds - Drain-Source Breakdown Voltage | 105 V |
| Product Type | RF MOSFET Transistors |
| Maximum Operating Temperature | + 225 C |
| Technology | Si |
| Transistor Polarity | Dual N-Channel |
| Rds On - Drain-Source Resistance | 80 mOhms |
| Gain | 17.5 dB |
| Packaging | Reel |