RF MOSFET Transistors RF LDMOS FET
Products specifications
| Rds On - Drain-Source Resistance | 100 mOhms |
| Technology | Si |
| Maximum Operating Temperature | + 225 C |
| Gain | 17.5 dB |
| Product Type | RF MOSFET Transistors |
| Output Power | 450 W |
| Vds - Drain-Source Breakdown Voltage | 105 V |
| Packaging | Reel |
| Transistor Polarity | N-Channel |