PXAC182002FC-V1-R0

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RF MOSFET Transistors RF LDMOS FET

SKU: PXAC182002FC-V1-R0

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RF MOSFET Transistors RF LDMOS FET

Products specifications

Technology	Si
Maximum Operating Temperature	+ 225 C
Gain	16.5 dB
Vds - Drain-Source Breakdown Voltage	65 V
Output Power	180 W
Rds On - Drain-Source Resistance	180 mOhms
Product Type	RF MOSFET Transistors
Transistor Polarity	Dual N-Channel
Packaging	Reel

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Products specifications

Technology	Si
Maximum Operating Temperature	+ 225 C
Gain	16.5 dB
Vds - Drain-Source Breakdown Voltage	65 V
Output Power	180 W
Rds On - Drain-Source Resistance	180 mOhms
Product Type	RF MOSFET Transistors
Transistor Polarity	Dual N-Channel
Packaging	Reel