PXAC201602FC-V1-R0

RF MOSFET Transistors RF LDMOS FET

SKU: PXAC201602FC-V1-R0

Qty:

PRICE BREAKS - The more you buy, the more you save

Quantity

50+

Price

R 2,366.86

Free shipping

RF MOSFET Transistors RF LDMOS FET

Products specifications

Output Power	140 W
Technology	Si
Transistor Polarity	Dual N-Channel
Rds On - Drain-Source Resistance	175 mOhms
Gain	17.7 dB
Vds - Drain-Source Breakdown Voltage	65 V
Packaging	Reel
Maximum Operating Temperature	+ 225 C
Product Type	RF MOSFET Transistors

Your name *

Your email *

Enquiry *

Products specifications

Output Power	140 W
Technology	Si
Transistor Polarity	Dual N-Channel
Rds On - Drain-Source Resistance	175 mOhms
Gain	17.7 dB
Vds - Drain-Source Breakdown Voltage	65 V
Packaging	Reel
Maximum Operating Temperature	+ 225 C
Product Type	RF MOSFET Transistors