PXAC203302FV-V1-R250

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RF MOSFET Transistors RF LDMOS FET

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RF MOSFET Transistors RF LDMOS FET

Products specifications

Output Power	330 W
Product Type	RF MOSFET Transistors
Gain	16 dB
Vds - Drain-Source Breakdown Voltage	65 V
Packaging	Reel
Rds On - Drain-Source Resistance	88 mOhms
Transistor Polarity	Dual N-Channel
Maximum Operating Temperature	+ 225 C
Technology	Si

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Products specifications

Output Power	330 W
Product Type	RF MOSFET Transistors
Gain	16 dB
Vds - Drain-Source Breakdown Voltage	65 V
Packaging	Reel
Rds On - Drain-Source Resistance	88 mOhms
Transistor Polarity	Dual N-Channel
Maximum Operating Temperature	+ 225 C
Technology	Si