PXAC243502FV-V1-R250

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RF MOSFET Transistors RF LDMOS FET

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RF MOSFET Transistors RF LDMOS FET

Products specifications

Output Power	350 W
Packaging	Reel
Maximum Operating Temperature	+ 225 C
Rds On - Drain-Source Resistance	88 mOhms
Technology	Si
Product Type	RF MOSFET Transistors
Gain	15 dB
Vds - Drain-Source Breakdown Voltage	65 V
Transistor Polarity	Dual N-Channel

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Products specifications

Output Power	350 W
Packaging	Reel
Maximum Operating Temperature	+ 225 C
Rds On - Drain-Source Resistance	88 mOhms
Technology	Si
Product Type	RF MOSFET Transistors
Gain	15 dB
Vds - Drain-Source Breakdown Voltage	65 V
Transistor Polarity	Dual N-Channel