RF MOSFET Transistors RF LDMOS FET
Products specifications
| Output Power | 60 W |
| Transistor Polarity | Dual N-Channel |
| Vds - Drain-Source Breakdown Voltage | 65 V |
| Packaging | Reel |
| Technology | Si |
| Maximum Operating Temperature | + 225 C |
| Product Type | RF MOSFET Transistors |
| Rds On - Drain-Source Resistance | 800 mOhms |