AUIRF1010EZ

MOSFET AUTO 60V 1 N-CH HEXFET 8.5mOhms
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SKU: AUIRF1010EZ

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R 44.86

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MOSFET AUTO 60V 1 N-CH HEXFET 8.5mOhms
Lead Time: 0 Days

Products specifications

Vds - Drain-Source Breakdown Voltage	60 V
Id - Continuous Drain Current	84 A
Minimum Operating Temperature	- 55 C
Number of Channels	1 Channel
Channel Mode	Enhancement
Transistor Polarity	N-Channel
Mounting Style	Through Hole
Rds On - Drain-Source Resistance	8.5 mOhms
Pd - Power Dissipation	140 W
Configuration	Single
Vgs - Gate-Source Voltage	20 V
Qg - Gate Charge	58 nC
Packaging	Tube
Technology	Si
Qualification	AEC-Q101

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Products specifications

Vds - Drain-Source Breakdown Voltage	60 V
Id - Continuous Drain Current	84 A
Minimum Operating Temperature	- 55 C
Number of Channels	1 Channel
Channel Mode	Enhancement
Transistor Polarity	N-Channel
Mounting Style	Through Hole
Rds On - Drain-Source Resistance	8.5 mOhms
Pd - Power Dissipation	140 W
Configuration	Single
Vgs - Gate-Source Voltage	20 V
Qg - Gate Charge	58 nC
Packaging	Tube
Technology	Si
Qualification	AEC-Q101