MOSFET Auto 60V Sngl N-Ch HEXFET PowerMOSFET
Products specifications
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vgs - Gate-Source Voltage | 20 V |
| Packaging | Cut Tape, MouseReel, Reel |
| Qg - Gate Charge | 85 nC |
| Qualification | AEC-Q101 |
| Rds On - Drain-Source Resistance | 4.2 mOhms |
| Id - Continuous Drain Current | 160 A |
| Vgs th - Gate-Source Threshold Voltage | 4 V |
| Pd - Power Dissipation | 230 W |
| Maximum Operating Temperature | + 175 C |
| Minimum Operating Temperature | - 55 C |
| Configuration | Single |