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MOSFET Automotive Logic Le mOhm, 13 nC Qg, IPAK

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MOSFET Automotive Logic Le mOhm, 13 nC Qg, IPAK

Products specifications

Packaging	Tube
Technology	Si
Rds On - Drain-Source Resistance	275 mOhms
Id - Continuous Drain Current	9.3 A
Qg - Gate Charge	13 nC
Qualification	AEC-Q101
Mounting Style	Through Hole
Vds - Drain-Source Breakdown Voltage	250 V
Transistor Polarity	N-Channel

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Products specifications

Packaging	Tube
Technology	Si
Rds On - Drain-Source Resistance	275 mOhms
Id - Continuous Drain Current	9.3 A
Qg - Gate Charge	13 nC
Qualification	AEC-Q101
Mounting Style	Through Hole
Vds - Drain-Source Breakdown Voltage	250 V
Transistor Polarity	N-Channel