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RF MOSFET Transistors Silicon DMOS RF FET 350W-28V-175MHz PP

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RF MOSFET Transistors Silicon DMOS RF FET 350W-28V-175MHz PP

Products specifications

Technology	Si
Maximum Operating Temperature	+ 150 C
Output Power	350 W
Transistor Polarity	N-Channel
Product Type	RF MOSFET Transistors
Id - Continuous Drain Current	35 A
Gain	13 dB
Vds - Drain-Source Breakdown Voltage	70 V

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Products specifications

Technology	Si
Maximum Operating Temperature	+ 150 C
Output Power	350 W
Transistor Polarity	N-Channel
Product Type	RF MOSFET Transistors
Id - Continuous Drain Current	35 A
Gain	13 dB
Vds - Drain-Source Breakdown Voltage	70 V