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RF MOSFET Transistors Silicon DMOS RF FET 10W-12.5V-175MHz SE

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RF MOSFET Transistors Silicon DMOS RF FET 10W-12.5V-175MHz SE

Products specifications

Id - Continuous Drain Current	10 A
Gain	10 dB
Product Type	RF MOSFET Transistors
Vds - Drain-Source Breakdown Voltage	40 V
Maximum Operating Temperature	+ 150 C
Transistor Polarity	N-Channel
Technology	Si
Output Power	10 W

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Products specifications

Id - Continuous Drain Current	10 A
Gain	10 dB
Product Type	RF MOSFET Transistors
Vds - Drain-Source Breakdown Voltage	40 V
Maximum Operating Temperature	+ 150 C
Transistor Polarity	N-Channel
Technology	Si
Output Power	10 W