RF MOSFET Transistors Silicon DMOS RF FET 2.5W-28V- 1GHz SE
Products specifications
| Gain | 13 dB |
| Product Type | RF MOSFET Transistors |
| Transistor Polarity | N-Channel |
| Maximum Operating Temperature | + 150 C |
| Output Power | 2.5 W |
| Vds - Drain-Source Breakdown Voltage | 65 V |
| Id - Continuous Drain Current | 1 A |
| Technology | Si |