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RF MOSFET Transistors Silicon DMOS RF FET 5W-28V-1GHz SE

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RF MOSFET Transistors Silicon DMOS RF FET 5W-28V-1GHz SE

Products specifications

Id - Continuous Drain Current	1 A
Product Type	RF MOSFET Transistors
Output Power	2.5 W
Gain	13 dB
Transistor Polarity	N-Channel
Technology	Si
Maximum Operating Temperature	+ 150 C
Vds - Drain-Source Breakdown Voltage	65 V

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Products specifications

Id - Continuous Drain Current	1 A
Product Type	RF MOSFET Transistors
Output Power	2.5 W
Gain	13 dB
Transistor Polarity	N-Channel
Technology	Si
Maximum Operating Temperature	+ 150 C
Vds - Drain-Source Breakdown Voltage	65 V