RF MOSFET Transistors Silicon DMOS RF FET 10W-50V-500MHz SE
Products specifications
| Output Power | 10 W |
| Product Type | RF MOSFET Transistors |
| Vds - Drain-Source Breakdown Voltage | 125 V |
| Transistor Polarity | N-Channel |
| Id - Continuous Drain Current | 3 A |
| Gain | 13 dB |
| Maximum Operating Temperature | + 150 C |
| Technology | Si |