IPW50R199CP

MOSFET N-Ch 500V 17A TO247-3 CoolMOS CP
Lead Time: 0 Days

SKU: IPW50R199CP

Packaging

Tube

Standard Pack Qty

240

Availability: 2 in stock

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MOSFET N-Ch 500V 17A TO247-3 CoolMOS CP
Lead Time: 0 Days

Products specifications

Manufacturer Infineon

Product Category MOSFET

RoHS Details

Technology Si

Mounting Style Through Hole

Package/Case TO-247-3

Number of Channels 1 Channel

Transistor Polarity N-Channel

Vds - Drain-Source Breakdown Voltage 500 V

Id - Continuous Drain Current 17 A

Rds On - Drain-Source Resistance 199 mOhms

Vgs - Gate-Source Voltage 20 V

Minimum Operating Temperature - 55 C

Maximum Operating Temperature + 150 C

Pd - Power Dissipation 139 W

Configuration Single

Channel Mode Enhancement

Tradename CoolMOS

Packaging Tube

Height 21.1 mm

Length 16.13 mm

Series CoolMOS CE

Transistor Type 1 N-Channel

Width 5.21 mm

Brand Infineon Technologies

Fall Time 10 ns

Product Type MOSFET

Rise Time 14 ns

Factory Pack Quantity 240

Subcategory MOSFETs

Typical Turn-Off Delay Time 80 nS

Typical Turn-On Delay Time 35 ns

Part # Aliases IPW50R199CPFKSA1 SP000236096 IPW5R199CPXK IPW50R199CPFKSA1

Unit Weight 38 g

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Products specifications

Manufacturer Infineon

Product Category MOSFET

RoHS Details

Technology Si

Mounting Style Through Hole

Package/Case TO-247-3

Number of Channels 1 Channel

Transistor Polarity N-Channel

Vds - Drain-Source Breakdown Voltage 500 V

Id - Continuous Drain Current 17 A

Rds On - Drain-Source Resistance 199 mOhms

Vgs - Gate-Source Voltage 20 V

Minimum Operating Temperature - 55 C

Maximum Operating Temperature + 150 C

Pd - Power Dissipation 139 W

Configuration Single

Channel Mode Enhancement

Tradename CoolMOS

Packaging Tube

Height 21.1 mm

Length 16.13 mm

Series CoolMOS CE

Transistor Type 1 N-Channel

Width 5.21 mm

Brand Infineon Technologies

Fall Time 10 ns

Product Type MOSFET

Rise Time 14 ns

Factory Pack Quantity 240

Subcategory MOSFETs

Typical Turn-Off Delay Time 80 nS

Typical Turn-On Delay Time 35 ns

Part # Aliases IPW50R199CPFKSA1 SP000236096 IPW5R199CPXK IPW50R199CPFKSA1

Unit Weight 38 g

Manufacturer	Infineon
Product Category	MOSFET
RoHS	Details
Technology	Si
Mounting Style	Through Hole
Package/Case	TO-247-3
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	500 V
Id - Continuous Drain Current	17 A
Rds On - Drain-Source Resistance	199 mOhms
Vgs - Gate-Source Voltage	20 V
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	139 W
Configuration	Single
Channel Mode	Enhancement
Tradename	CoolMOS
Packaging	Tube
Height	21.1 mm
Length	16.13 mm
Series	CoolMOS CE
Transistor Type	1 N-Channel
Width	5.21 mm
Brand	Infineon Technologies
Fall Time	10 ns
Product Type	MOSFET
Rise Time	14 ns
Factory Pack Quantity	240
Subcategory	MOSFETs
Typical Turn-Off Delay Time	80 nS
Typical Turn-On Delay Time	35 ns
Part # Aliases	IPW50R199CPFKSA1 SP000236096 IPW5R199CPXK IPW50R199CPFKSA1
Unit Weight	38 g

Manufacturer	Infineon
Product Category	MOSFET
RoHS	Details
Technology	Si
Mounting Style	Through Hole
Package/Case	TO-247-3
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	500 V
Id - Continuous Drain Current	17 A
Rds On - Drain-Source Resistance	199 mOhms
Vgs - Gate-Source Voltage	20 V
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	139 W
Configuration	Single
Channel Mode	Enhancement
Tradename	CoolMOS
Packaging	Tube
Height	21.1 mm
Length	16.13 mm
Series	CoolMOS CE
Transistor Type	1 N-Channel
Width	5.21 mm
Brand	Infineon Technologies
Fall Time	10 ns
Product Type	MOSFET
Rise Time	14 ns
Factory Pack Quantity	240
Subcategory	MOSFETs
Typical Turn-Off Delay Time	80 nS
Typical Turn-On Delay Time	35 ns
Part # Aliases	IPW50R199CPFKSA1 SP000236096 IPW5R199CPXK IPW50R199CPFKSA1
Unit Weight	38 g

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