IXFA26N30X3

MOSFETs TO263 300V 26A N-CH X3CLASS
Lead Time: 287 Days

SKU: IXFA26N30X3

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Tube

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50

Availability: 2764 in stock

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MOSFETs TO263 300V 26A N-CH X3CLASS
Lead Time: 287 Days

Products specifications

Manufacturer IXYS

Product Category MOSFET

RoHS Details

Mounting Style SMD/SMT

Package/Case TO-263-3

Number of Channels 1 Channel

Transistor Polarity N-Channel

Vds - Drain-Source Breakdown Voltage 300 V

Id - Continuous Drain Current 72 A

Rds On - Drain-Source Resistance 19 mOhms

Vgs - Gate-Source Voltage 20 V

Vgs th - Gate-Source Threshold Voltage 2.5 V

Qg - Gate Charge 82 nC

Minimum Operating Temperature - 55 C

Maximum Operating Temperature + 150 C

Pd - Power Dissipation 390 W

Configuration Single

Channel Mode Enhancement

Tradename HiPerFET

Packaging Tube

Series HiPerFET

Transistor Type 1 N-Channel

Brand IXYS

Forward Transconductance - Min 36 S

Fall Time 11 ns

Product Type MOSFET

Rise Time 25 ns

Factory Pack Quantity 50

Subcategory MOSFETs

Typical Turn-Off Delay Time 86 ns

Typical Turn-On Delay Time 22 ns

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Products specifications

Manufacturer IXYS

Product Category MOSFET

RoHS Details

Mounting Style SMD/SMT

Package/Case TO-263-3

Number of Channels 1 Channel

Transistor Polarity N-Channel

Vds - Drain-Source Breakdown Voltage 300 V

Id - Continuous Drain Current 72 A

Rds On - Drain-Source Resistance 19 mOhms

Vgs - Gate-Source Voltage 20 V

Vgs th - Gate-Source Threshold Voltage 2.5 V

Qg - Gate Charge 82 nC

Minimum Operating Temperature - 55 C

Maximum Operating Temperature + 150 C

Pd - Power Dissipation 390 W

Configuration Single

Channel Mode Enhancement

Tradename HiPerFET

Packaging Tube

Series HiPerFET

Transistor Type 1 N-Channel

Brand IXYS

Forward Transconductance - Min 36 S

Fall Time 11 ns

Product Type MOSFET

Rise Time 25 ns

Factory Pack Quantity 50

Subcategory MOSFETs

Typical Turn-Off Delay Time 86 ns

Typical Turn-On Delay Time 22 ns

Manufacturer	IXYS
Product Category	MOSFET
RoHS	Details
Mounting Style	SMD/SMT
Package/Case	TO-263-3
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	300 V
Id - Continuous Drain Current	72 A
Rds On - Drain-Source Resistance	19 mOhms
Vgs - Gate-Source Voltage	20 V
Vgs th - Gate-Source Threshold Voltage	2.5 V
Qg - Gate Charge	82 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	390 W
Configuration	Single
Channel Mode	Enhancement
Tradename	HiPerFET
Packaging	Tube
Series	HiPerFET
Transistor Type	1 N-Channel
Brand	IXYS
Forward Transconductance - Min	36 S
Fall Time	11 ns
Product Type	MOSFET
Rise Time	25 ns
Factory Pack Quantity	50
Subcategory	MOSFETs
Typical Turn-Off Delay Time	86 ns
Typical Turn-On Delay Time	22 ns

Manufacturer	IXYS
Product Category	MOSFET
RoHS	Details
Mounting Style	SMD/SMT
Package/Case	TO-263-3
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	300 V
Id - Continuous Drain Current	72 A
Rds On - Drain-Source Resistance	19 mOhms
Vgs - Gate-Source Voltage	20 V
Vgs th - Gate-Source Threshold Voltage	2.5 V
Qg - Gate Charge	82 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	390 W
Configuration	Single
Channel Mode	Enhancement
Tradename	HiPerFET
Packaging	Tube
Series	HiPerFET
Transistor Type	1 N-Channel
Brand	IXYS
Forward Transconductance - Min	36 S
Fall Time	11 ns
Product Type	MOSFET
Rise Time	25 ns
Factory Pack Quantity	50
Subcategory	MOSFETs
Typical Turn-Off Delay Time	86 ns
Typical Turn-On Delay Time	22 ns

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