IXFA4N100P-TRL

MOSFETs IXFA4N100P TRL

SKU: IXFA4N100P-TRL

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Quantity

800+

Price

R 70.50

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MOSFETs IXFA4N100P TRL

Products specifications

Manufacturer	IXYS
Product Category	MOSFET
RoHS	Details
Technology	Si
Mounting Style	SMD/SMT
Package/Case	TO-263-3
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	1 kV
Id - Continuous Drain Current	4 A
Rds On - Drain-Source Resistance	3.3 Ohms
Vgs - Gate-Source Voltage	20 V
Vgs th - Gate-Source Threshold Voltage	6 V
Qg - Gate Charge	26 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	150 W
Configuration	Single
Channel Mode	Enhancement
Tradename	HiPerFET
Packaging	Tube
Height	4.83 mm
Length	9.65 mm
Series	IXFA4N100
Transistor Type	1 N-Channel
Type	Polar HiPerFET Power MOSFET
Width	10.41 mm
Brand	IXYS
Forward Transconductance - Min	1.8 S
Fall Time	50 ns
Product Type	MOSFET
Rise Time	36 ns
Factory Pack Quantity	50
Subcategory	MOSFETs
Typical Turn-Off Delay Time	37 ns
Typical Turn-On Delay Time	24 ns
Unit Weight	1.600 g

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Products specifications

Manufacturer	IXYS
Product Category	MOSFET
RoHS	Details
Technology	Si
Mounting Style	SMD/SMT
Package/Case	TO-263-3
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	1 kV
Id - Continuous Drain Current	4 A
Rds On - Drain-Source Resistance	3.3 Ohms
Vgs - Gate-Source Voltage	20 V
Vgs th - Gate-Source Threshold Voltage	6 V
Qg - Gate Charge	26 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	150 W
Configuration	Single
Channel Mode	Enhancement
Tradename	HiPerFET
Packaging	Tube
Height	4.83 mm
Length	9.65 mm
Series	IXFA4N100
Transistor Type	1 N-Channel
Type	Polar HiPerFET Power MOSFET
Width	10.41 mm
Brand	IXYS
Forward Transconductance - Min	1.8 S
Fall Time	50 ns
Product Type	MOSFET
Rise Time	36 ns
Factory Pack Quantity	50
Subcategory	MOSFETs
Typical Turn-Off Delay Time	37 ns
Typical Turn-On Delay Time	24 ns
Unit Weight	1.600 g