IXFP56N30X3M

MOSFETs TO220 300V 56A N-CH X3CLASS
Lead Time: 245 Days

SKU: IXFP56N30X3M

Packaging

Tube

Standard Pack Qty

50

Availability: 1 in stock

Qty:

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1+

10+

Price

R 297.04

R 190.25

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MOSFETs TO220 300V 56A N-CH X3CLASS
Lead Time: 245 Days

Products specifications

Manufacturer IXYS

Product Category MOSFET

RoHS Details

Technology Si

Mounting Style Through Hole

Package/Case TO-220-3

Number of Channels 1 Channel

Transistor Polarity N-Channel

Vds - Drain-Source Breakdown Voltage 300 V

Id - Continuous Drain Current 56 A

Rds On - Drain-Source Resistance 27 mOhms

Vgs - Gate-Source Voltage 10 V

Vgs th - Gate-Source Threshold Voltage 2.5 V

Qg - Gate Charge 56 nC

Pd - Power Dissipation 320 W

Configuration Single

Channel Mode Enhancement

Tradename HiPerFET

Packaging Tube

Series HiPerFET

Brand IXYS

Forward Transconductance - Min 26 S

Fall Time 10 ns

Product Type MOSFET

Rise Time 26 ns

Factory Pack Quantity 50

Subcategory MOSFETs

Typical Turn-Off Delay Time 64 ns

Typical Turn-On Delay Time 21 ns

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Products specifications

Manufacturer IXYS

Product Category MOSFET

RoHS Details

Technology Si

Mounting Style Through Hole

Package/Case TO-220-3

Number of Channels 1 Channel

Transistor Polarity N-Channel

Vds - Drain-Source Breakdown Voltage 300 V

Id - Continuous Drain Current 56 A

Rds On - Drain-Source Resistance 27 mOhms

Vgs - Gate-Source Voltage 10 V

Vgs th - Gate-Source Threshold Voltage 2.5 V

Qg - Gate Charge 56 nC

Pd - Power Dissipation 320 W

Configuration Single

Channel Mode Enhancement

Tradename HiPerFET

Packaging Tube

Series HiPerFET

Brand IXYS

Forward Transconductance - Min 26 S

Fall Time 10 ns

Product Type MOSFET

Rise Time 26 ns

Factory Pack Quantity 50

Subcategory MOSFETs

Typical Turn-Off Delay Time 64 ns

Typical Turn-On Delay Time 21 ns

Manufacturer	IXYS
Product Category	MOSFET
RoHS	Details
Technology	Si
Mounting Style	Through Hole
Package/Case	TO-220-3
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	300 V
Id - Continuous Drain Current	56 A
Rds On - Drain-Source Resistance	27 mOhms
Vgs - Gate-Source Voltage	10 V
Vgs th - Gate-Source Threshold Voltage	2.5 V
Qg - Gate Charge	56 nC
Pd - Power Dissipation	320 W
Configuration	Single
Channel Mode	Enhancement
Tradename	HiPerFET
Packaging	Tube
Series	HiPerFET
Brand	IXYS
Forward Transconductance - Min	26 S
Fall Time	10 ns
Product Type	MOSFET
Rise Time	26 ns
Factory Pack Quantity	50
Subcategory	MOSFETs
Typical Turn-Off Delay Time	64 ns
Typical Turn-On Delay Time	21 ns

Manufacturer	IXYS
Product Category	MOSFET
RoHS	Details
Technology	Si
Mounting Style	Through Hole
Package/Case	TO-220-3
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	300 V
Id - Continuous Drain Current	56 A
Rds On - Drain-Source Resistance	27 mOhms
Vgs - Gate-Source Voltage	10 V
Vgs th - Gate-Source Threshold Voltage	2.5 V
Qg - Gate Charge	56 nC
Pd - Power Dissipation	320 W
Configuration	Single
Channel Mode	Enhancement
Tradename	HiPerFET
Packaging	Tube
Series	HiPerFET
Brand	IXYS
Forward Transconductance - Min	26 S
Fall Time	10 ns
Product Type	MOSFET
Rise Time	26 ns
Factory Pack Quantity	50
Subcategory	MOSFETs
Typical Turn-Off Delay Time	64 ns
Typical Turn-On Delay Time	21 ns

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