MOSFETs Polar3 HiPerFET Power MOSFETs
Products specifications
|
Manufacturer
|
IXYS |
|
Product Category
|
MOSFET |
|
RoHS
|
Details |
|
Technology
|
Si |
|
Mounting Style
|
Through Hole |
|
Package/Case
|
TO-220-3 |
|
Number of Channels
|
1 Channel |
|
Transistor Polarity
|
N-Channel |
|
Vds - Drain-Source Breakdown Voltage
|
300 V, 500 V |
|
Id - Continuous Drain Current
|
56 A, 5 A |
|
Rds On - Drain-Source Resistance
|
27 mOhms, 1.65 Ohms |
|
Vgs - Gate-Source Voltage
|
10 V, 30 V |
|
Vgs th - Gate-Source Threshold Voltage
|
2.5 V, 5 V |
|
Qg - Gate Charge
|
56 nC, 6.9 nC |
|
Pd - Power Dissipation
|
320 W, 114 W |
|
Configuration
|
Single |
|
Channel Mode
|
Enhancement |
|
Tradename
|
HiPerFET |
|
Packaging
|
Tube |
|
Series
|
HiPerFET, IXFP5N50 |
|
Brand
|
IXYS |
|
Forward Transconductance - Min
|
26 S, 2.5 S |
|
Fall Time
|
10 ns, 12 ns |
|
Product Type
|
MOSFET |
|
Rise Time
|
26 ns, 13 ns |
|
Factory Pack Quantity
|
50 |
|
Subcategory
|
MOSFETs |
|
Typical Turn-Off Delay Time
|
64 ns, 28 ns |
|
Typical Turn-On Delay Time
|
21 ns, 14 ns |
|
Minimum Operating Temperature
|
- 55 C |
|
Maximum Operating Temperature
|
+ 150 C |
|
Height
|
16 mm |
|
Length
|
10.66 mm |
|
Type
|
Polar3 HiperFET Power MOSFET |
|
Width
|
4.83 mm |
|
Unit Weight
|
350 mg |